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Slkor BTA26-800B

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Slkor BTA26-800B

Holding Current (Ih) : 80mA

Operating Temperature : -40℃~+125℃

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 25A

Peak off - state voltage(Vdrm) : 800V

SCR Type : -

Gate Trigger Voltage (Vgt) : 1.5V

Description : TRIAC 800V 25A Through Hole TO-3P-3

Mfr. Part # : BTA26-800B

Model Number : BTA26-800B

Package : TO-3P-3

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Product Overview

Function: TRIAC for 3 Quadrants / 4 Quadrants switching applications.

Advantages: Low gate trigger voltage (VGT: 1.5V), high repetitive peak off-state voltage (VDRM VRRM: 800V and 1000V), and high RMS on-state current (IT(RMS): 25A).

Applications: Washing machines, vacuum cleaners, massagers, solid-state relays, AC motor speed regulation, and similar applications.

Brand

SLKORMICRO

Package Type

TO-3P

Technical Specifications

Symbol	Parameter	Conditions	BTA26-800 Value	BTA26-1000 Value	Unit
VDRM VRRM	Repetitive Peak Off-State Voltage		800	1000	V
IT(RMS)	R.M.S On-State Current	Tc=110C	25		A
ITSM	Surge On-State Current	f=50/60Hz, tp=16.7ms/20ms	250/260		A
It	It for fusing	Tp=10ms	340		As
PG(AV)	Average Gate Power Dissipation	Tj=125C	1		W
IGM	Peak Gate Current	Tj=125C	6		A
Tj	Operating Junction Temperature		40~125		C
TSTG	Storage Temperature		40~150		C

Symbol	Parameter	Test Conditions	Value	Unit
IDRM	Repetitive Peak Off-State Current	Tc=25C	5	uA
IDRM	Repetitive Peak Off-State Current	Tc=125C	3	mA
IRRM	Repetitive Peak Reverse Current	Tc=25C	5	uA
IRRM	Repetitive Peak Reverse Current	Tc=125C	3	mA
VTM	Forward "on" voltage	IT=35A, tp=380us	1.55	V
VGT	Gate trigger voltage	VD=12V ,RL=30	1.5	V
di/dt	Critical rate of rise of on-state current	I,II,III F=120Hz,Tj=125C, IG=2xIGT,tr100ns	50	A/us
di/dt	Critical rate of rise of on-state current	IV	10	A/us
IGT	Gate trigger current	I,II,III VD=12V, RL=30	35	mA
IGT	Gate trigger current	IV	100	mA
IH	Holding current	IT=0.2A	60	mA
VDG	Gate non-trigger voltage	ALL VD=VDRM, TJ=125C	0.2	V
dv/dt	Critical-rate of rise of commutation voltage	TJ=125C , VD=2/3VDRM , Gate open circuit	400	V/us
Rth(j-c)	Thermal resistance Junction to case		1.1	C/W
Rth(j-a)	Thermal resistance Junction to ambient		50	C/W

939ba88b621132fb87a4713e699f8c58.pdf?productCode=C359988

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