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Slkor SL20T65F

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Slkor SL20T65F

Td(off) : 52ns

Pd - Power Dissipation : 35W

Td(on) : 16ns

Operating Temperature : -55℃~+175℃@(Tj)

Collector-Emitter Breakdown Voltage (Vces) : 650V

Input Capacitance(Cies) : -

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA

Gate Charge(Qg) : 43.9nC@20A,15V

Reverse Recovery Time(trr) : 429ns

Switching Energy(Eoff) : 300uJ

Turn-On Energy (Eon) : 790uJ

Description : IGBT FS (Field Stop) 650V 20A 35W Through Hole TO-220F

Mfr. Part # : SL20T65F

Model Number : SL20T65F

Package : TO-220F

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Product Overview

Features: Low gate charge, Trench FS Technology, RoHS product.

Applications: General purpose inverters, UPS.

Brand SLKOR

Series SL20T65

Package Types TO-220F, TO-220, TO-263, TO-247

Parameter	Symbol / Unit	Test Conditions	Min	Typ	Max	Unit
Collector-Emmiter Voltage	Vces				650	V
Collector Current-continuous (Tc=25)	Ic				40	A
Collector Current-continuous (Tc=100)	Ic				20	A
Collector Current-pulse	ICM	(note 1)			80	A
Diode RMS forward current (T=25)	IF				40	A
Diode RMS forward current (T=100)	IF				20	A
Gate-Emmiter Voltage	VGES				20	V
Surge non repetitive forward current	IFSM	tp=10ms sinusoidal			80	A
Power Dissipation (TC=25)	PD				35	W
Power Dissipation (TC=100)	PD				156	W
Power Dissipation (TC=175)	PD				162	W
Diode Forward Current (TC=100)	PD				20	A
Storage Temperature Range	TSTG		-55		+150
Operating Temperature Range	TJ		-55		+175
Maximum Lead Temperature for Soldering Purposes	TL				300
Collector-Emmiter Voltage Breakdown	BVCES	IC=500A,VGE=0V	650	-	-	V
Breakdown Voltage Temperature Coefficient	BVCES/TJ	IC=1mA,referenced to 25	-	0.5	-	V/
Zero Gate Voltage Collector Current	ICES	VCE=650V,VGE=0V, TC=25	-	10	-	A
Gate-body leakage current	IGES	VCE=0V,VGE=20V	-	-	200	nA
Gate-Emmiter Threshold Voltage	VGE(th)	VCE=VGE, lc=250uA	4.5	-	6.5	V
Collector-Emmiter saturation Voltage (TC=25)	VCESAT	VGE=15V,IC=20A	-	1.6	2.0	V
Collector-Emmiter saturation Voltage (TC=125)	VCESAT	VGE=15V,IC=20A	-	1.75	2.15	V
Collector-Emmiter saturation Voltage (TC=175)	VCESAT	VGE=15V,IC=20A	-	1.9	2.3	V
Short Collector current	Ic(sc)	VGE=15V, VCE=360V, tsc< 10us, Tc<=25	-	116.7	-	A
Input capacitance	Cies	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25	-	1500	-	pF
Output capacitance	Coes	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25	-	128	-	pF
Reverse transfer capacitance	Cres	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25	-	28.7	-	pF
Turn-On delay time (Tc=25)	td(on)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	16	-	ns
Turn-On rise time (Tc=25)	tr	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	56	-	ns
Turn-off delay time (Tc=25)	td(off)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	52	-	ns
Turn-off Fall time (Tc=25)	tf	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	82	-	ns
Turn-on energy (Tc=25)	Eon	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	0.79	-	mJ
Turn-off energy (Tc=25)	Eoff	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	0.3	-	mJ
Total switching Energy (Tc=25)	Etotal	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	1.09	-	mJ
Turn-On delay time (Tc=175)	td(on)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	14	-	ns
Turn-On rise time (Tc=175)	tr	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	54	-	ns
Turn-off delay time (Tc=175)	td(off)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	76	-	ns
Turn-off Fall time (Tc=175)	tf	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	146	-	ns
Turn-on energy (Tc=175)	Eon	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	0.8	-	mJ
Turn-off energy (Tc=175)	Eoff	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	0.49	-	mJ
Total switching Energy (Tc=175)	Etotal	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load	-	1.3	-	mJ
Total Gate Charge	Qg	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)	-	43.9	-	nC
Gate to emitter charge	Qge	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)	-	10.0	-
Gate to collector charge	Qgc	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)	-	18.9	-
Gate resistance	Rg	f=1MHz,open collector	-	1.8	-
Diode Forward Voltage (TC=25)	VF	VGE=0V,IF=20A	-	1.4	-	V
Diode Forward Voltage (TC=125)	VF	VGE=0V,IF=20A	-	1.2	-	V
Diode Forward Voltage (TC=175)	VF	VGE=0V,IF=20A	-	1.0	-	V
Diode Reverse recovery time (TC=25)	trr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	254	-	ns
Reverse recovery charge (TC=25)	Qrr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	347	-	nC
Diode Reverse recovery Current (TC=25)	Irrm	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	2.7	-	A
Diode Reverse recovery time (TC=175)	trr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	429	-	ns
Reverse recovery charge (TC=175)	Qrr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	1010	-	nC
Diode Reverse recovery Current (TC=175)	Irrm	VGE=0V, IF=20A dl=/dt=100A/us (note 4)	-	4	-	A
IGBT Thermal Resistance, Junction to Case	Rth(j-c)			0.77	3.57	/W
FRD Thermal Resistance, Junction to Case	Rth(j-c)			2.05	7.7	/W
Thermal Resistance, Junction to Ambitent	Rth(j-A)			33.8	62.5	/W

2409302302_Slkor-SL20T65F_C6800597.pdf

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