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Slkor SL15T120FL

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Slkor SL15T120FL

Td(off) : 180ns

Pd - Power Dissipation : -

Operating Temperature : -55℃~+150℃

Td(on) : 80ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 50pF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@600uA

Gate Charge(Qg) : 70nC@15V

Reverse Recovery Time(trr) : 200ns

Switching Energy(Eoff) : 1.1mJ

Turn-On Energy (Eon) : 2.2mJ

Input Capacitance(Cies) : 1.03nF

Pulsed Current- Forward(Ifm) : 40A

Output Capacitance(Coes) : 80pF

Description : IGBT 1.2kV 15A Through Hole TO-247

Mfr. Part # : SL15T120FL

Model Number : SL15T120FL

Package : TO-247

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Product Overview

The SL15T120FL/K is a high-performance power semiconductor device featuring FS Technology and low gate charge. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key features include a typical saturation voltage (VCE(sat)) of 2.2V at IC=15A and TC=25C, and it is a ROHS compliant product.

Brand

SLKORMicro

Technology

FS Technology

Certifications

ROHS

Package Types

TO-247, TO-263

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	BVces	Ic=500uA, Vee=0V		1200		V
Zero Gate Voltage Collector Current	Ices	Vce=1200V, Vee=0V, Tc=25C		0.102		mA
Collector Current (Leakage)		Tc=100C		2		mA
Gate-Body Leakage Current (Reverse)	I GSS	Vee=0V, Vee=-20V		-100		nA
Gate-Emitter Threshold Voltage	VGE(th)	VCE=VGE, Ic=600uA	45	-	85	V
Short Collector Current	Icsc	Vee=15V, Vce=600V, Tsc<10uS,Tc=25C		80		A
Collector-Emitter Saturation Voltage	VCE(sat)	Tc=25C		1.22	1.25	V
Collector-Emitter Saturation Voltage	VCE(sat)	Tc=125C		2.4		V
Collector-Emitter Saturation Voltage	VCE(sat)	Tc=150C		2.5		V
Input Capacitance	Cies		1030	1800		pF
Output Capacitance	Coes	VCE=25V, VGE=0V, f=1.0MHz	80	120		pF
Reverse Transfer Capacitance	Cres		50	100		pF
Total Gate Charge	Qg	VCC=600V, IC=15A, VGE=15V	34	70		nC
Turn-On Delay Time	td(on)	Vee=15V, Ic=15A, Vce=600V, Re=10, Inductive Load, Tc=25C		80		ns
Turn-On Rise Time	tr			65		ns
Turn-Off Delay Time	td(off)			180		ns
Turn-Off Fall Time	tf			180		ns
Turn-on Energy	Eon			122		mJ
Turn-off Energy	Eoff			11		mJ
Total Switching Energy	Etot			132		mJ
Diode Forward Voltage	Ve	Vee=0V, Ir=15A	1.18	2.9		V
Diode Reverse Recovery Time	trr	Vee=0V, Vr=800V, IF=15A		200		ns
Diode Reverse Recovery Charge	Qrr	dlf/dt=750A/us		-	-

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	Vces	1200	V
Collector Current-continuous	Ic	30 (Tc=25C), 15 (Tc=100C)	A
Collector Current-pulse (note 1)	Icm	40	A
Diode Continuous Forward Current	IF	15 (Tc=100C)	A
Diode Maximum Forward Current (Note 1)	IFM	40	A
Gate-Emitter Voltage	Vees	30	V
Power Dissipation (TO-247)	Po	125 (Tc=25C)	W
Power Dissipation (TO-263)	Po	182 (Tc=25C)	W
Operating Temperature Range	Tj	-55~+150	C
Storage Temperature Range	Tstg	-55~+150	C
Maximum Lead Temperature for Soldering	TL	300	C

Parameter	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RthJC	2.0 (TO-247), 0.82 (TO-263)	C/W
Thermal Resistance, Junction to Ambient	RthJA	48 (TO-247), 62.5 (TO-263)	C/W

2409302302_Slkor-SL15T120FL_C5632302.pdf

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