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Slkor BTA12-600B

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Slkor BTA12-600B

Operating Temperature : -40℃~+125℃

Holding Current (Ih) : 20mA

Current - Gate Trigger(Igt) : 30mA

Voltage - On State(Vtm) : 1.4V

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 12A

Peak off - state voltage(Vdrm) : 600V

SCR Type : -

Gate Trigger Voltage (Vgt) : 1.5V

Description : 600V 12A Through Hole TO-220

Mfr. Part # : BTA12-600B

Model Number : BTA12-600B

Package : TO-220

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Product Overview

This product is a Bi-Directional Triode Thyristor (TRIAC) designed for power control applications. It offers high performance with a repetitive peak off-state voltage of 600V and an RMS on-state current of 12A. Key features include high commutation dv/dt and an isolation voltage of 1500V AC, making it suitable for various industrial and consumer electronics where reliable switching and isolation are required.

Features

  • Repetitive Peak Off-State Voltage: 600V
  • R.M.S On-State Current (IT(RMS)= 12 A)
  • High Commutation dv/dt
  • Isolation Voltage (VISO = 1500V AC)
Product Type
Bi-Directional Triode Thyristor (TRIAC)
Package Type
TO-220F
Brand
SLKOR
Model
BTA12-600B
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage TJ = 25C unless otherwise specified 600 V
IT(RMS) R.M.S On-State Current TC = 79 C 12 A
ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 119/130 A
I2t I2t 71 A2s
PGM Peak Gate Power Dissipation 5.0 W
PG(AV) Average Gate Power Dissipation 0.5 W
IGM Peak Gate Current 2.0 A
VGM Peak Gate Voltage 10 V
VISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500 V
TJ Operating Junction Temperature -40 ~ 125 C
TSTG Storage Temperature -40 ~ 150 C
Mass 2.0 g
Symbol Items Conditions Min. Typ. Max. Units
IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 C - - 2.0 mA
VTM Peak On-State Voltage IT = 20 A, Inst. Measurement - - 1.4 V
I+ GT1 Gate Trigger Current VD = 6 V, RL=10 - - 30 mA
I- GT1 - - 30 mA
I- GT3 - - 30 mA
V+ GT1 Gate Trigger Voltage VD = 6 V, RL=10 - - 1.5 V
V- GT1 - - 1.5 V
V- GT3 - - 1.5 V
VGD Non-Trigger Gate Voltage TJ = 125 C, VD = 1/2 VDRM 0.2 - - V
(dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 10 - - V/
IH Holding Current - 20 - mA
Rth(j-c) Thermal Impedance Junction to case - - 3.3 C/W

f62e137c51fd79bf1f5660cfbf2fef11.pdf?productCode=C253902
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