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Slkor SMUN5211DW

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Slkor SMUN5211DW

DC Current Gain : 35@5mA,10V

Current - Collector(Ic) : 100mA

Resistor Ratio : 1.2

Number : 2 NPN (Pre-Biased)

Pd - Power Dissipation : 385mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 385mW Surface Mount SOT-363

Mfr. Part # : SMUN5211DW

Model Number : SMUN5211DW

Package : SOT-363

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Product Overview

The BRT (Bias Resistor Transistor) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network, simplifying circuit design, reducing board space, and decreasing component count. The SMUN5211DW model houses two BRT devices in a SOT-363 package, ideal for low-power surface mount applications where board space is limited.

Certifications: Material complies with RoHS requirements.

Product Name

Dual NPN Bias Resistor Transistors

Model

SMUN5211DW

Package Type

SOT-363

Device Marking

Resistor Values

R1: 10 K, R2: 10 K

Resistor Ratio

0.8 - 1.2

Shipping Quantity

3000/Tape&Reel

Parameter	Symbol	Min.	Max.	Unit	Notes
Collector-Base Voltage	V_CBO	-	50	Vdc	Common for Q₁ and Q₂
Collector-Emitter Voltage	V_CEO	-	50	Vdc	Common for Q₁ and Q₂
Collector Current	I_C	-	100	mAdc	Common for Q₁ and Q₂
Total Device Dissipation (One Junction Heated)	P_D	-	187	mW	T_A= 25C, FR-4 @ Minimum Pad
Total Device Dissipation (One Junction Heated)	P_D	-	256	mW	T_A= 25C, FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Ambient (One Junction Heated)	_JA	-	670	C/W	FR-4 @ Minimum Pad
Thermal Resistance Junction-to-Ambient (One Junction Heated)	_JA	-	490	C/W	FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead (One Junction Heated)	_JL	-	250	C/W	FR-4 @ Minimum Pad
Thermal Resistance Junction-to-Lead (One Junction Heated)	_JL	-	385	C/W	FR-4 @ 1.0 x 1.0 inch Pad
Total Device Dissipation (Both Junctions Heated)	P_D	-	2.0	mW/C	Derate above 25C, FR-4 @ Minimum Pad
Total Device Dissipation (Both Junctions Heated)	P_D	-	3.0	mW/C	Derate above 25C, FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)	_JA	-	493	C/W	FR-4 @ Minimum Pad
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)	_JA	-	325	C/W	FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead (Both Junctions Heated)	_JL	-	188	C/W	FR-4 @ Minimum Pad
Thermal Resistance Junction-to-Lead (Both Junctions Heated)	_JL	-	208	C/W	FR-4 @ 1.0 x 1.0 inch Pad
Junction and Storage Temperature	T_J, T_stg	-55	+150	C	-
DC Current Gain	h_FE	35	-	-	V_CE = 10 V, I_C = 5 mA
Collector Base Cutoff Current	I_CBO	-	100	nA	V_CB = 50 V
Collector Emitter Cutoff Current	I_CEO	-	500	nA	V_CE = 50 V
Emitter Base Cutoff Current	I_EBO	-	0.5	mA	V_EB = 6 V
Collector Base Breakdown Voltage	V_(BR)CBO	50	-	V	I_C = 10 A
Collector Emitter Breakdown Voltage	V_(BR)CEO	50	-	V	I_C = 2 mA
Collector Emitter Saturation Voltage	V_CEsat	-	0.25	V	I_C = 10 mA, I_B = 0.3 mA
Output Voltage (on)	V_OL	-	0.2	V	V_CC = 5 V, V_B = 2.5 V, R_L = 1 K
Output Voltage (off)	V_OH	4.9	-	V	V_CC = 5 V, V_B = 0.5 V, R_L = 1 K
Input Resistor	R₁	7	13	K	-

2303300930_Slkor-SMUN5211DW_C5375293.pdf

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