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Slkor MMUN2212

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Slkor MMUN2212

DC Current Gain : 100@10V,5mA

Current - Collector(Ic) : 100mA

Operating Temperature : -65℃~+150℃

type : NPN

Output Voltage(VO(on)) : 200mV

Input Resistor : 61.1kΩ

Resistor Ratio : 1

Pd - Power Dissipation : 200mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

Mfr. Part # : MMUN2212

Model Number : MMUN2212

Package : SOT-23

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Product Overview

This series of digital transistors (Bias Resistor Transistors - BRT) integrates a single NPN silicon transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. This integration eliminates the need for external discrete components, reducing system cost and board space. The BRT is housed in a SOT-23 package, suitable for low-power surface mount applications. The modified gull-winged leads are designed to absorb thermal stress during soldering, preventing damage to the die. Available in 8 mm embossed tape and reel packaging.

Advantages:

Simplifies Circuit Design
Reduces Board Space and Component Count
Eliminates external bias resistors

Application:

Low power surface mount applications.

Package Type

SOT-23

Transistor Type

NPN Silicon

Mounting Type

Surface Mount

Packaging

8 mm embossed tape and reel

Device Marking	R1 (k)	R2 (k)	Collector-Emitter Breakdown Voltage (V(BR)CEO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (VCE(sat))	Input Resistor (R1)
MMUN2211 / A8A	10	10	50 Vdc	35 - 100	0.25 Vdc	7.0 k
MMUN2212 / A8B	22	22	50 Vdc	60 - 140	0.25 Vdc	15.4 k
MMUN2213 / A8C	47	47	50 Vdc	80 - 140	0.25 Vdc	32.9 k
MMUN2214 / A8D	10	47	50 Vdc	80 - 350	0.25 Vdc	7.0 k
MMUN2215 / A8E	10		50 Vdc	160 - 350	0.25 Vdc	7.0 k
MMUN2216 / A8F	4.7		50 Vdc	160 - 350	0.25 Vdc	3.3 k
MMUN2230 / A8G	1.0	1.0	50 Vdc	3.0 - 5.0	0.25 Vdc	0.7 k
MMUN2231 / A8H	2.2	2.2	50 Vdc	8.0 - 15	0.25 Vdc	1.5 k
MMUN2232 / A8J	4.7	4.7	50 Vdc	15 - 30	0.25 Vdc	3.3 k
MMUN2233 / A8K	4.7	47	50 Vdc	80 - 200	0.25 Vdc	3.3 k
MMUN2234 / A8L	22	47	50 Vdc	80 - 150	0.25 Vdc	15.4 k
MMUN2235 / A8M	2.2	47	50 Vdc	80 - 140	0.25 Vdc	2.2 k
MMUN2238 / A8R	2.2		50 Vdc	160 - 350	0.25 Vdc	2.2 k
MMUN2241 / A8U	100		50 Vdc	160 - 350	0.25 Vdc	70 k

Characteristic	Symbol	Min	Typ	Max	Unit	Condition
Collector-Base Cutoff Current	ICBO			100	nAdc	VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current	ICEO			500	nAdc	VCE = 50 V, IB = 0
Emitter-Base Cutoff Current	IEBO			0.5	mAdc	VEB = 6.0 V, IC = 0
Collector-Base Breakdown Voltage	V(BR)CBO	50			Vdc	IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	50			Vdc	IC = 2.0 mA, IB = 0 (Note 2.)
Collector-Emitter Saturation Voltage	VCE(sat)			0.25	Vdc	IC = 10 mA, IB = 0.3 mA
Total Power Dissipation	PD		200		mW	@ TA = 25C (Note 1.)
Thermal Resistance Junction-to-Ambient	RJA		625		C/W	(surface mounted)
Operating and Storage Temperature Range	TJ, Tstg	65		150	C
Maximum Temperature for Soldering	TL		260		C	Sec (Time in Solder Bath)

2410151050_Slkor-MMUN2212_C41428768.pdf

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