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TOSHIBA RN2302 LF PNP Bipolar Transistor Featuring Built in Bias Resistor for Compact Electronic Designs

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TOSHIBA RN2302 LF PNP Bipolar Transistor Featuring Built in Bias Resistor for Compact Electronic Designs

DC Current Gain : 50@10mA,5V

Emitter-Base Voltage VEBO : 10V

Current - Collector(Ic) : 100mA

Operating Temperature : -55℃~+150℃

Input Resistor : 10kΩ

Resistor Ratio : 1

Pd - Power Dissipation : 100mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 100mW Surface Mount USM

Mfr. Part # : RN2302,LF

Model Number : RN2302,LF

Package : USM

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RN2301 to RN2306 Bipolar Transistors

The RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. The integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit diverse circuit designs. These devices are complementary to the RN1301 to RN1306 series.

Product Attributes

  • Brand: Toshiba
  • Type: Silicon PNP Epitaxial Bipolar Transistor
  • Process: PCT Process
  • Certifications: AEC-Q101 qualified
  • Complementary Series: RN1301 to RN1306

Technical Specifications

Part No.Bias Resistor R1 (k)Bias Resistor R2 (k)Collector-emitter voltage (VCEO)Collector current (IC)Collector power dissipation (PC)Junction temperature (Tj)Storage temperature (Tstg)Transition frequency (fT) (Typ.)DC current gain (hFE) (Typ.)
RN23014.74.7-50 V-5 mA100 mW (RN2301RN2304)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)
RN23021010-50 V-5 mA100 mW (RN2301RN2304)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)
RN23032222-50 V-5 mA100 mW (RN2301RN2304)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)
RN23044747-50 V-5 mA100 mW (RN2301RN2304)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)
RN23052.247-50 V-5 mA100 mW (RN2305,RN2306)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)
RN23064.747-50 V-5 mA100 mW (RN2305,RN2306)150 C-55 to 150 C200 MHz (RN2301RN2306)200 (RN2301RN2306)

2410122008_TOSHIBA-RN2302-LF_C5349734.pdf


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