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NPN Transistor GOODWORK BC817-40W SOT-323 Package Ideal for Amplification and Switching Applications

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NPN Transistor GOODWORK BC817-40W SOT-323 Package Ideal for Amplification and Switching Applications

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 45V

Description : Bipolar (BJT) Transistor NPN 45V 0.5A 0.3W Surface Mount SOT-323

Mfr. Part # : BC817-40W

Model Number : BC817-40W

Package : SOT-323

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Product Overview

The BC817-40W is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

Product Attributes

Type: Transistor (NPN)
Package: SOT-323
Brand: (Not specified)
Origin: (Not specified)
Material: (Not specified)
Color: (Not specified)
Certifications: (Not specified)

Technical Specifications

Parameter	Symbol	Test conditions	MIN	MAX	UNIT
Collector-Base Voltage	VCBO	IC= 10A, IE=0		50	V
Collector-Emitter Voltage	VCEO	IC= 10mA, IB=0		45	V
Emitter-Base Voltage	VEBO	IE= 1A, IC=0		5	V
Collector Current -Continuous	IC			0.5	A
Collector Power Dissipation	PC	TA=25		0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	150
Collector Cut-off Current	ICBO	VCB= 45 V, IE=0		0.1	A
Emitter Cut-off Current	IEBO	VEB=4V, IC=0		0.1	A
DC Current Gain	hFE(1)	VCE=1V, IC=100mA	100	600
DC Current Gain	hFE(2)	VCE=1V, IC=500mA		40
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 500mA, IB= 50mA		0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 500mA, IB= 50mA		1.2	V
Base-Emitter Voltage	VBE	VCE= 1 V, IC= 500mA		1.2	V
Collector Capacitance	Cob	VCB=10V, f=1MHz		10	pF
Transition Frequency	fT	VCE= 5 V, IC= 10mA f=100MHz		100	MHz

2410161003_GOODWORK-BC817-40W_C41431975.pdf

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