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IGBT module Infineon IKW40N65F5 with 650V voltage and 74A current featuring RAPID 1 diode technology

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IGBT module Infineon IKW40N65F5 with 650V voltage and 74A current featuring RAPID 1 diode technology

Pd - Power Dissipation : 255W

Td(off) : 160ns

Td(on) : 19ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 9pF

Input Capacitance(Cies) : 2.5nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 3.2V@0.4mA

Gate Charge(Qg) : 95nC@15V

Pulsed Current- Forward(Ifm) : 120A

Output Capacitance(Coes) : 50pF

Reverse Recovery Time(trr) : 60ns

Switching Energy(Eoff) : 100uJ

Turn-On Energy (Eon) : 360uJ

Description : 255W 650V TO-247-3 Single IGBTs RoHS

Mfr. Part # : IKW40N65F5

Model Number : IKW40N65F5

Package : TO-247-3

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Product Overview

The IKW40N65F5 and IKP40N65F5 are high-speed 5 FAST IGBTs in TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft anti-parallel diodes. These 650V DuoPack devices offer best-in-class efficiency in hard switching and resonant topologies, low Qg, and a maximum junction temperature of 175C. They are qualified according to JEDEC for target applications and are Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM 5
Diode Type: RAPID 1
Certifications: JEDEC, RoHS compliant
Lead Plating: Pb-free

Technical Specifications

Type	VCE	IC (TC=25C)	VCEsat (Tvj=25C)	Tvjmax	Marking	Package
IKW40N65F5	650V	74.0A	1.6V	175C	K40EF5	PG-TO247-3
IKP40N65F5	650V	74.0A	1.6V	175C	K40EF5	PG-TO220-3

2501061740_Infineon-IKW40N65F5_C536217.pdf

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